Thin high-k dielectric layers deposited by ALD

被引：8

作者：

Campabadal, F. ^{[1
]}

Zabala, M. ^{[1
]}

Rafi, J. M. ^{[1
]}

Acero, M. C. ^{[1
]}

Sanchez, A. ^{[1
]}

Sanchez, J. ^{[1
]}

Sanchez, S. ^{[1
]}

Andreu, R. ^{[1
]}

机构：

[1] CSIC, IMB CNM, Barcelona 08193, Spain

来源：

PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES | 2009年

关键词：

GATE DIELECTRICS; TRANSISTORS; SI;

D O I：

10.1109/SCED.2009.4800421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper first results on the growth of thin layers of Al(2)O(3), HfO(2) and nanolaminates of them, by Atomic Layer Deposition are reported. The electrical characterization of the deposited layers has been carried out by means of the analysis of the capacitance-voltage and current-voltage characteristics of Aluminum-high-k dielectric-Silicon capacitors. The obtained results show that for the same physical thickness, HfO(2) layers are leakier than Al(2)O(3) layers and that a nanolaminate stack of them improves the performance of the dielectric in terms of current and breakdown voltage although at the expense of a higher EOT.

引用

页码：27 / 30

页数：4

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