Optical properties of silicon-implanted polycrystalline diamond membranes

被引：9

作者：

Kambalathmana, H. ^{[1
,2
]}

Flatae, A. M. ^{[1
,2
]}

Hunold, L. ^{[1
,2
]}

Sledz, F. ^{[1
,2
]}

Mueller, J. ^{[2
,3
]}

Hepp, M. ^{[2
,3
]}

Schmuki, P. ^{[4
]}

Killian, M. S. ^{[2
,5
]}

Lagomarsino, S. ^{[1
,2
,6
]}

Gelli, N. ^{[6
]}

Sciortino, S. ^{[6
,7
]}

Giuntini, L. ^{[6
,7
]}

Woerner, E. ^{[8
]}

Wild, C. ^{[8
]}

Butz, B. ^{[2
,3
]}

Agio, M. ^{[1
,2
,9
]}

机构：

[1] Univ Siegen, Lab Nanoopt, D-57072 Siegen, Germany

[2] Univ Siegen, Ctr Micro & Nanochem & Engn C, D-57068 Siegen, Germany

[3] Univ Siegen, Micro & Nanoanalyt Grp, D-57076 Siegen, Germany

[4] FAU Erlangen, Chair Surface Sci & Corros, D-91058 Erlangen, Germany

[5] Univ Siegen, Chem & Struct Novel Mat, D-57076 Siegen, Germany

[6] Ist Nazl Fis Nucl, Sez Firenze, I-50019 Sesto Fiorentino, Italy

[7] Univ Florence, Dept Phys & Astron, I-50019 Sesto Fiorentino, Italy

[8] Diamond Mat GmbH, D-79108 Freiburg, Germany

[9] Natl Res Council CNR, Natl Inst Opt INO, I-50125 Florence, Italy

来源：

CARBON | 2021年 / 174卷

关键词：

CVD diamond Films; Ion implantation; Silicon-vacancy center; Spectroscopy and confocal mapping; STEM analysis; ToF-SIMS analysis; ION-IMPLANTATION; VACANCY CENTERS; SINGLE; ACCELERATOR; FABRICATION; EXCITATION; NANOTUBES; EMISSION; EMITTERS; FILMS;

D O I：

10.1016/j.carbon.2020.12.031

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigate the optical properties of polycrystalline diamond membranes containing silicon-vacancy (SiV) color centers in combination with other nano-analytical techniques. We analyze the correlation between the Raman signal, the SiV emission, and the background luminescence in the crystalline grains and in the grain boundaries, identifying conditions for the addressability of single SiV centers. Moreover, we perform a scanning transmission electron microscopy (STEM) analysis, which associates the microscopic structure of the membranes and the evolution of the diamond crystals along the growth direction with the photoluminescence properties, as well as a time-of-flight secondary ion mass spectrometry (ToF-SIMS) to address the distribution of Si in implanted and un-implanted membranes. The results of the STEM and ToF-SIMS studies are consistent with the outcome of the optical measurements and provide useful insight into the preparation of polycrystalline samples for quantum nano-optics. (C) 2020 Elsevier Ltd. All rights reserved.

引用

页码：295 / 304

页数：10

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