GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition

被引：7
作者：
Huang, G. S.
Lu, T. C.
Yao, H. H.
Kuo, H. C.
Wang, S. C.
Sun, Greg
Lin, Chih-wei
Chang, Li
Soref, Richard A.
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
[3] Univ Massachusetts, Dept Phys, Boston, MA 02125 USA
[4] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[5] USAF, Res Lab, Sensors Directorate, Hanscom AFB, MA 01731 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / 687-690期
关键词：
X-ray diffraction; metal organic chemical vapor deposition; nitrides;
D O I：
10.1016/j.jcrysgro.2006.10.106
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The GaN/AlGaN active regions for terahertz (THz) quantum cascade lasers were grown by metal organic chemical vapor deposition (MOCVD). The surface of the sample was characterized by atomic force microscopy (AFM). The structure of this sample was evaluated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD pattern and cross-sectional TEM images showed that a well-controlled quantum cascade GaN/AlGaN layers could be prepared. Optical properties of the active region of a terahertz GaN/AlGaN have been investigated by Fourier transform infrared (FTIR) spectrometer. It was found that the frequency of E-1(LO) phonon decreased in quantum cascade GaN/AlGaN structures. The phonon frequency shift could be attributed to the effect of phonon zone folding. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：687 / 690
页数：4
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