Bulk GaN single crystals: growth conditions by flux method

被引：51
|
作者：
Song, YT
Wang, WJ
Yuan, WX
Wu, X
Chen, XL
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Univ Sci & Technol Beijing, Dept Appl Sci, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 247卷 / 3-4期
关键词：
growth from solutions; single crystal growth; gallium compounds; nitrides; semiconducting III-V materials;
D O I：
10.1016/S0022-0248(02)02014-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Hexagonal GaN platelet crystals with a size of 1-4 mm have been grown by a Li-based flux method. The influence of growth conditions such as the molar ratio of starting materials, temperature, pressure, the position of Li3N in the crucible on the growth of GaN single crystals was studied. The quality of GaN single crystal was checked by optical microscope and X-ray rocking curve. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：275 / 278
页数：4
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