Human body model ESD protection of RF bipolar circuits

被引：0
|
作者：
Davis, Paul
Horton, Brian
机构：
来源：
Proceedings of the 2006 Bipolar/BiCMOS Circuits and Technology Meeting | 2006年
关键词：
silicon bipolar/BiCMOS process technology; bipolar modeling and simulation; power devices; analog or digital circuits; RF circuits; device physics;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RF and other high-frequency bipolar circuits operating at 1-5 GHz have been ESD protected using the Human Body Model test to 2kV. The described design and modeling techniques minimize the operating parasitics, chip area, and number of process turn-arounds.
引用
收藏
页码：158 / 161
页数：4
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