Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD

被引：5

作者：

Zhou, J. ^{[1
]}

Ren, X. M.

Wang, Q.

Xiong, D. P.

Huang, H.

Huang, Y. Q.

机构：

[1] Minist Educ, Key Lab Opt Commun & Lighthouse Technol, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, Inst Continuing Educ, Beijing 100876, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 02期

关键词：

epitaxial lateral overgrowth (ELO); metalorganic chemical vapor (MOCVD); InP; competition effect;

D O I：

10.1016/j.mejo.2006.11.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial lateral overgrowth (ELO) of InP on InP/GaAs substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) was investigated. The lateral overgrowth InP layers were obtained on the SiO2 masked InP seed layer, which was deposited on the (10 0) GaAs substrate by the two-step method. The surface characterization of overgrowth InP was dependent on the V/III ratio, the mask width and the growth time. When decreasing the V/III ratio or reducing the mask width respectively, the sidewalls "competition effect" was obviously observed. After a longer time, new (10 0)-like top surfaces were formatted because of the precursors migrating from the sidewall facets to the (10 0) top surfaces. The experimental findings will be explained by growth kinetics in conjunction with the different dominant source supply mechanism. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：255 / 258

页数：4

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