Growth of spectroscopic grade Cd0.9Zn0.1Te:In by THM technique

被引：31

作者：

Roy, U. N. ^{[1
]}

Gueorguiev, A. ^{[1
]}

Weiller, S. ^{[1
]}

Stein, J. ^{[1
]}

机构：

[1] ICX Radiat, Oak Ridge, TN 37830 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 312卷 / 01期

关键词：

Nuclear radiation detectors; THM; CZT; Semiconducting II-VI materials; TRAVELING HEATER METHOD; CDZNTE CRYSTALS; DETECTORS; FIELD;

D O I：

10.1016/j.jcrysgro.2009.09.035

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Large indium-doped detector grade (52 mm diameter, 1.1 kg) Cd0.9Zn0.1Te crystals have been grown by THM technique from Te-rich solution. The as-grown crystals showed the dark resistivity of 2 x 10(10)Omega cm and mobility life time product of electrons of 4-7 x 10(-3) cm(2)/V. A quasi-hemispherical configuration was used in the device fabrication, which provides an economic way of electron only detector configuration. A resolution of 2% was achieved for the Cs-137 662 keV gamma line at room temperature for the as-grown THM samples. (C) 2009 Elsevier B.V. All rights reserved.

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页码：33 / 36

页数：4

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