Analytical formulation and electrical measurements of self-heating in silicon BJT's

被引：10

作者：

Nenadovic, N ^{[1
]}

d'Alessandro, V ^{[1
]}

Nanver, LK ^{[1
]}

Rinaldi, N ^{[1
]}

Schellevis, H ^{[1
]}

Slotboom, JW ^{[1
]}

机构：

[1] Delft Univ Technol, DIMES, Lab ECTM, NL-2600 GB Delft, Netherlands

来源：

PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2002年

关键词：

D O I：

10.1109/BIPOL.2002.1042879

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new analytical formulation of the temperature at thermal runaway in silicon BJT's is presented and supported by measurements on a thermally very sensitive. silicon-on-glass process. The linear relationship between V-BE and V-CB for a given collector current is used to define a straightforward method for electrically determining the biasing conditions at thermal runaway.

引用

页码：24 / 27

页数：4

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