Performance improvement of InGaN/GaN light-emitting diodes with triangular-shaped multiple quantum wells

被引：16

作者：

Zhu, Li-Hong ^{[1
]}

Zheng, Qing-Hong ^{[1
]}

Liu, Bao-Lin ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 12期

关键词：

RECOMBINATION DYNAMICS; POLARIZATION-FIELDS; LOCALIZED EXCITONS; OPTICAL-PROPERTIES; GAN; EMISSION;

D O I：

10.1088/0268-1242/24/12/125003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Triangular-shaped InGaN/GaN multiple quantum wells (MQWs) grown on a sapphire substrate were adopted as an active layer of light-emitting diodes (LEDs). The temperature dependence of the normalized integrated photoluminescence (PL) intensity showed that the internal quantum efficiency (IQE) of the LEDs with triangular-shaped MQW is much higher than that of the LEDs with conventional rectangular MQW structures. The electroluminescence (EL) spectra of the two series devices have been comparatively studied as functions of injection current. It was found that the device with the triangular-shaped MQW structure exhibited a stronger intensity and a narrower linewidth. Furthermore, the peak energy is nearly independent of the injection current, indicating that the triangular MQW LEDs are more efficient and stable than the rectangular ones.

引用

页数：5

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