The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations

被引：6
作者：
Siddiqua, Poppy [1 ]
O'Leary, Stephen K. [1 ]
机构：
[1] Univ British Columbia, Sch Engn, 3333 Univ Way, Kelowna, BC V1V IV7, Canada
来源：
JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 09期
基金：
加拿大自然科学与工程研究理事会;
关键词：
WURTZITE ZINC-OXIDE; MONTE-CARLO-SIMULATION; HIGH-FIELD TRANSPORT; GALLIUM NITRIDE; NONPARABOLICITY COEFFICIENT; STRUCTURAL-PROPERTIES; ALUMINUM NITRIDE; BAND-GAP; SEMICONDUCTORS; INN;
D O I：
10.1063/1.4942831
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Within the framework of a semi-classical three-valley Monte Carlo electron transport simulation approach, we analyze the steady-state and transient aspects of the electron transport within bulk zinc-blende indium nitride, with a focus on the response to variations in the crystal temperature and the doping concentration. We find that while the electron transport associated with zinc-blende InN is highly sensitive to the crystal temperature, it is not very sensitive to the doping concentration selection. The device consequences of these results are then explored. (C) 2016 AIP Publishing LLC.
引用
收藏
页数：10
相关论文
共 42 条
  • [1] Longitudinal polar optical phonons in InN/GaN single and double heterostructures
    Ardali, Sukru
    Tiras, Engin
    Gunes, Mustafa
    Balkan, Naci
    Ajagunna, Adebowale Olufunso
    Iliopoulos, Eleftherios
    Georgakilas, Alexandros
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, 2011, 8 (05): : 1620 - 1624
  • [2] Cubic group-III nitride-based nanostructures-basics and applications in optoelectronics
    As, D. J.
    [J]. MICROELECTRONICS JOURNAL, 2009, 40 (02) : 204 - 209
  • [3] Electron mobility limited by scattering from screened positively charged dislocation lines within indium nitride
    Baghani, Erfan
    O'Leary, Stephen K.
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (26)
  • [4] Ensemble Monte Carlo study of electron transport in wurtzite InN
    Bellotti, E
    Doshi, BK
    Brennan, KF
    Albrecht, JD
    Ruden, PP
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) : 916 - 923
  • [5] CHARACTERIZATION OF GROUP-III NITRIDE SEMICONDUCTORS BY HIGH-RESOLUTION ELECTRON-MICROSCOPY
    CHANDRASEKHAR, D
    SMITH, DJ
    STRITE, S
    LIN, ME
    MORKOC, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 152 (03) : 135 - 142
  • [6] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE
    FAWCETT, W
    BOARDMAN, AD
    SWAIN, S
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &
  • [7] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS
    FERRY, DK
    [J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2361 - 2369
  • [8] Transient electron transport in wurtzite GaN, InN, and AlN
    Foutz, BE
    O'Leary, SK
    Shur, MS
    Eastman, LF
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) : 7727 - 7734
  • [9] Electron cyclotron effective mass in indium nitride
    Goiran, Michel
    Millot, Marius
    Poumirol, Jean-Marie
    Gherasoiu, Iulian
    Walukiewicz, Wladek
    Leotin, Jean
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (05)
  • [10] Non-parabolicity and inter-valley transitions within zinc-blende indium nitride
    Hadi, Walid A.
    Siddiqua, Poppy
    O'Leary, Stephen K.
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25 (12) : 5524 - 5534
12345