Removal of oxygen from electronic materials by vapor-phase processes

被引:7
作者
Palosz, W
机构
[1] NASA, Marshall Space Flight Center, Space Sciences Laboratory, Huntsville
基金
美国国家航空航天局;
关键词
D O I
10.1016/S0022-0248(96)00843-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Thermochemical analyses of equilibrium partial pressures over oxides with and without the presence of the respective element condensed phase, and hydrogen, chalcogens, hydrogen chalcogenides, and graphite are presented. Theoretical calculations are supplemented with experimental results on the rate of decomposition and/or sublimation/vaporization of the oxides under dynamic vacuum, and on the rate of reaction with hydrogen, graphite, and chalcogens. Procedures of removal of a number of oxides under different conditions are discussed.
引用
收藏
页码:427 / 439
页数:13
相关论文
共 14 条
[1]  
BARIN I, 1974, THERMOCHEMICAL PROPE
[2]  
Barin Ihsan., 2013, THERMOCHEMICAL PROPE
[3]   GASB AND INSB CRYSTALS GROWN BY VERTICAL AND HORIZONTAL TRAVELING HEATER METHOD [J].
BENZ, KW ;
MULLER, G .
JOURNAL OF CRYSTAL GROWTH, 1979, 46 (01) :35-42
[4]  
Bird G. A., 1994, MOL GAS DYNAMICS DIR
[5]  
Hultgren R. R., 1973, SELECTED VALUES THER
[7]  
Kaldis E., 1969, Journal of Crystal Growth, V5, P376, DOI 10.1016/0022-0248(69)90039-6
[8]  
KALDIS E, 1974, CRYSTAL GROWTH THEOR, V1
[9]   HIGH-TEMPERATURE VAPORIZATION BEHAVIOR OF OXIDES .2. OXIDES OF BE, MG, CA, SR, BA, B, AL, GA, IN, TL, SI, GE, SN, PB, ZN, CD, AND HG [J].
LAMOREAUX, RH ;
HILDENBRAND, DL ;
BREWER, L .
JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 1987, 16 (03) :419-443