Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

被引：122

作者：

Fujita, Shizuo ^{[1
]}

Oda, Masaya ^{[2
]}

Kaneko, Kentaro ^{[1
]}

Hitora, Toshimi ^{[2
]}

机构：

[1] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158520, Japan

[2] FLOSFIA Inc, Kyodai Katsura Venture Plaza, Kyoto 6158245, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 12期

关键词：

CHEMICAL-VAPOR-DEPOSITION; BETA-GA2O3; SINGLE-CRYSTALS; MOLECULAR-BEAM EPITAXY; THIN-FILM GROWTH; OPTICAL-ABSORPTION; SAPPHIRE; PHASE; ALPHA-AL2O3; IN2O3; GAAS;

D O I：

10.7567/JJAP.55.1202A3

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recent progress and development of corundum-structured III-oxide semiconductors are reviewed. They allow bandgap engineering from 3.7 to similar to 9 eV and function engineering, leading to highly durable electronic devices and deep ultraviolet optical devices as well as multifunctional devices. Mist chemical vapor deposition can be a simple and safe growth technology and is advantageous for reducing energy and cost for the growth. This is favorable for the wide commercial use of devices at low cost. The III-oxide semiconductors are promising candidates for new devices contributing to sustainable social, economic, and technological development for the future. (C) 2016 The Japan Society of Applied Physics

引用

页数：9

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