Conductance distribution in doped and defected graphene nanoribbons

被引：35
作者：
La Magna, Antonino [1 ]
Deretzis, Ioannis [1 ,2 ]
Forte, Giuseppe [3 ]
Pucci, Renato [4 ,5 ]
机构：
[1] CNR, IMM, I-95121 Catania, Italy
[2] Univ Catania, Scuola Super, I-95123 Catania, Italy
[3] Univ Catania, Fac Farm, Dipartimento Sci Chim, I-95126 Catania, Italy
[4] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[5] CNISM, UdR Catania, I-95123 Catania, Italy
来源：
PHYSICAL REVIEW B | 2009年 / 80卷 / 19期
关键词：
doping; electric admittance; fluctuations; graphene; nanostructured materials; vacancies (crystal); GAPS;
D O I：
10.1103/PhysRevB.80.195413
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electronic transport at the mu m length scale is theoretically investigated for N-doped and vacancy damaged graphene nanoribbons. In these systems, localization due to scattering is strongly energy dependent, and this fact leads to the appearance of conductance quasigaps in the spectral region of the resonance states. Conductance fluctuations are very large in the quasigap regions and increase linearly with the system size. The single parameters scaling hypothesis is not verified for energies in a zone including the charge neutrality point while it is valid for energies away from this zone.
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页数：6
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