A 68-83 GHz Power Amplifier in 90 nm CMOS

被引：0

作者：

Lee, Jeffrey ^{[1
]}

Chen, Chung-Chun ^{[1
]}

Tsai, Jen-Han ^{[2
]}

Lin, Kun-You ^{[1
]}

Wang, Huei ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[2] Yuan Ze Univ, Dept Commun Engn, Chungli 320, Taiwan

来源：

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年

关键词：

CMOS; power amplifier (PA); millimeter-wave (MMW); MMIC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A balanced PA covering 68-83 GHz is developed in 90nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz. The PA has a maximum saturation output power of 14dBm at 70 GHz, and greater than 11.8 dBm from 68 to 83 GHz. The best P-1dB is 12 dBm at 68 GHz, and greater than 8.3 dBm from 68 to 83 GHz.

引用

页码：437 / +

页数：2

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (05) :1044-1057

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