Different location of photo- and electroluminescence in n-type porous silicon

被引：0
作者：
Babanov, YE
Buchin, EY
Prokaznikov, AV
Svetovoy, VB
机构：
[1] Institute of Microelectronics, Russian Academy of Sciences, 150 007 Yaroslavl
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1997年 / 161卷 / 01期
关键词：
D O I：
10.1002/1521-396X(199705)161:1<R1::AID-PSSA99991>3.0.CO;2-Y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
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页码：R1 / R2
页数：2
相关论文
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JOURNAL OF LUMINESCENCE, 1996, 70 :294-309
[2]   Characterization of a porous silicon diode with efficient and tunable electroluminescence [J].
Lalic, N ;
Linnros, J .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (10) :5971-5977
[3]   Porous silicon: A route towards a Si-based photonics? [J].
Pavesi, L .
MICROELECTRONICS JOURNAL, 1996, 27 (4-5) :437-448
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