Electronic topological transition in AuX2 (X = In, Ga and Al) compounds at high pressures

被引：15

作者：

Garg, AB ^{[1
]}

Godwal, BK

Meenakshi, S

Modak, P

Rao, RS

Sikka, SK

Vijayakumar, V

Lausi, A

Bussetto, E

机构：

[1] Bhabha Atom Res Ctr, High Pressure Phys Div, Bombay 400085, Maharashtra, India

[2] Sincrotrone Trieste, I-34012 Trieste, Italy

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 44期

关键词：

D O I：

10.1088/0953-8984/14/44/341

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present accurate x-ray diffraction data at high pressures for AuIn2,AuGa2 and AuAl2, obtained using a diamond anvil cell with the ELETTRA synchrotron source, The resulting P-V data obtained from the d-values were used to get the universal equation of state (UEOS), which is compared with theoretical estimates. Deviation from linearity is evident in the UEOS curves of AuIn2 and AuGa2, thus verifying that some of the observed anomalies in these systems below 5 GPa are due to electronic topological transitions.

引用

页码：10605 / 10608

页数：4

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