Photoluminescent and electrolumine scent Zn2Si0.5Ge0.5O4:Mn thin films for integrated optic devices

被引：15

作者：

Baker, CC ^{[1
]}

Heikenfeld, J

Steckl, AJ

机构：

[1] Univ Cincinnati, Nanoelect Lab, Cincinnati, OH 45221 USA

[2] Extreme Photon LLC, Cincinnati, OH 45219 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 06期

关键词：

electroluminescence; manganese; optical code division multiple access (OCDMA); optical waveguides; photoluminescence; prism coupling; zinc silicate germinate;

D O I：

10.1109/JSTQE.2002.806695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optical, photoluminescent (PL), and electroluminescent (EL) properties of Zn2Si0.5Ge0.5O4:Mn (ZSG:Mn) have been studied in order to determine its viability as a light source for integrated optics systems. ZSG:Mn thin films were deposited at room temperature by RF-sputtering on Si substrates. EL devices (ELDs) were fabricated using transparent indium-tin oxide electrodes. ELDs using as-deposited ZSG:Mn films emitted bright orange light with a broad spectrum at 590-660 nm. Annealing at 700 degreesC resulted in a color shift to green emission in a band from 510 to 550 urn and peaking at 520 run. Ridge waveguides fabricated by induction-coupled plasma etching yielded an optical loss of 3.8 dB/cm at 633 nm. Prism coupling experiments revealed a decrease in the film refractive index as the result of the anneal. The combination of strong PL, EL, and low waveguide loss demonstrates the strong potential of transition metal- and/or rare-earth-doped ZSG as a robust light source for integrated optic systems.

引用

页码：1420 / 1426

页数：7

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