Reliability of SiGe HBTs for Power Amplifiers-Part I: Large-Signal RF Performance and Operating Limits

被引：32

作者：

Grens, Curtis M. ^{[1
]}

Cheng, Peng ^{[1
]}

Cressler, John D. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2009年 / 9卷 / 03期

关键词：

Avalanche breakdown; bipolar transistors; dynamic stress; mixed-mode stress; power amplifier (PA); reliability; safe-operating area (SOA); SiGe HBTs; BIPOLAR; VOLTAGE;

D O I：

10.1109/TDMR.2009.2025029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper examines the performance and reliability implications associated with aggressively biased cascode SiGe HBT power-amplifier cores under large-signal RF operating conditions. The role of high-power RF stress on device degradation and failure is examined in detail. General expressions for a large-signal RF safe-operating area, which account for the effect of load impedance on the dynamic output current and voltage characteristics, are presented. These show excellent agreement with experimental results. Useful operating guidelines for reliable large-signal operation are provided.

引用

页码：431 / 439

页数：9

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