Evaluation of Surface Recombination Velocity of CdTe Radiation Detectors by Time-of-Flight Measurements

被引：0

作者：

Suzuki, K. ^{[1
]}

Shiraki, H. ^{[2
]}

机构：

[1] Hokkaido Inst Technol, Sapporo, Hokkaido 0068585, Japan

[2] Acrorad Co Ltd, Okinawa Plant, Okinawa, Japan

来源：

2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9 | 2009年

关键词：

CRYSTALS;

D O I：

暂无

中图分类号：

R8 [特种医学]; R445 [影像诊断学];

学科分类号：

1002 ; 100207 ; 1009 ;

摘要：

The surface recombination velocity of high resistivity CdTe with several different crystallographic orientations of (111), 5 degrees off from (111), 8 degrees off from (311) and (511) has been investigated by using a combination of a "mu tau-model" spectral fitting method and a time-of-flight drift mobility measurement. In the (111) and the 5 degrees off from (111) samples, the Cd face shows higher surface recombination velocity (similar to 6 x 10(5) cm/s) than that of the Te face (similar to 3 x 10(5) cm/s). Away from the polar face toward the (511) face, the difference is less pronounced although not disappeared completely.

引用

页码：5020 / +

页数：2