Evaluation of Surface Recombination Velocity of CdTe Radiation Detectors by Time-of-Flight Measurements

被引：0
|
作者：
Suzuki, K. [1 ]
Shiraki, H. [2 ]
机构：
[1] Hokkaido Inst Technol, Sapporo, Hokkaido 0068585, Japan
[2] Acrorad Co Ltd, Okinawa Plant, Okinawa, Japan
来源：
2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9 | 2009年
关键词：
CRYSTALS;
D O I：
暂无
中图分类号：
R8 [特种医学]; R445 [影像诊断学];
学科分类号：
1002 ; 100207 ; 1009 ;
摘要：
The surface recombination velocity of high resistivity CdTe with several different crystallographic orientations of (111), 5 degrees off from (111), 8 degrees off from (311) and (511) has been investigated by using a combination of a "mu tau-model" spectral fitting method and a time-of-flight drift mobility measurement. In the (111) and the 5 degrees off from (111) samples, the Cd face shows higher surface recombination velocity (similar to 6 x 10(5) cm/s) than that of the Te face (similar to 3 x 10(5) cm/s). Away from the polar face toward the (511) face, the difference is less pronounced although not disappeared completely.
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页码：5020 / +
页数：2
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