Room temperature visible light emission from Si/SiO2 multilayers:: Roles of interface electronic states and silicon phase

被引：18

作者：

Ternon, C

Gourbilleau, F

Dufour, C

Doualan, JL

Garrido, B

机构：

[1] ISMRA Univ Caen, FRE CNRS 2149, LERMAT, F-14050 Caen, France

[2] ISMRA Univ Caen, UMR 6637, CIRIL, F-14050 Caen, France

[3] Univ Barcelona, Fac Fys, Dept Elect, E-08028 Barcelona, Spain

来源：

JOURNAL OF LUMINESCENCE | 2002年 / 99卷 / 04期

关键词：

photoluminescence; microstructure; multilayer; Si/SiO2; reactive sputtering;

D O I：

10.1016/S0022-2313(02)00374-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have studied luminescence properties and microstructure of 20 patterns Si/SiO2 multilayers. The photoluminescence spectra consist of two gaussian bands in the visible-infrared spectral region. It has been demonstrated that the strong PL band is caused by the radiative recombination in the Si/SiO2, interfaces states, whereas the weaker band originates from radiative recombination in the nanosized Si layers. The peak shift of this latter band shows a discontinuity that corresponds to a crystalline-to-amorphous phase change when the Si layers are thinner than 30Angstrom. The peak energy as a function of the layer thickness is interpreted using a quantum confinement model in the case of amorphous Si layers. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：361 / 364

页数：4

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