Characterization of MFe2O4 (M = Mg, Zn) Thin Films Prepared by Pulsed Laser Deposition for Photoelectrochennical Applications

被引:39
作者
Henning, R. A. [1 ]
Uredat, P. [2 ,3 ]
Simon, C. [1 ,4 ]
Bloesser, A. [1 ,4 ]
Cop, P. [1 ,2 ]
Elm, M. T. [1 ,2 ,3 ]
Marschall, R. [1 ,4 ]
机构
[1] Justus Liebig Univ, Inst Phys Chem, Heinrich Buff Ring 17, D-35392 Giessen, Germany
[2] Justus Liebig Univ, Inst Expt Phys 1, Heinrich Buff Ring 17, D-35392 Giessen, Germany
[3] Justus Liebig Univ, Ctr Mat Res LaMa, Heinrich Buff Ring 16, D-35392 Giessen, Germany
[4] Univ Bayreuth, Phys Chem 3, Univ Str 30, D-95447 Bayreuth, Germany
关键词
ZINC FERRITE; ELECTRICAL-PROPERTIES; MAGNETIC-PROPERTIES; POLARON MOTION; PHOTOANODES; PERFORMANCE;
D O I
10.1021/acs.jpcc.9b04635
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Earth-abundant visible light-absorbing photoelectrodes of the spinel ferrites ZnFe2O4 and MgFe2O4 have been prepared as dense and crack free thin films using pulsed laser deposition, to investigate the basic electronic properties of these two emerging absorber materials. X-ray diffraction and Raman spectroscopy confirm the phase purity of the prepared thin films, whereas magnetotransport and Hall measurements in combination with Mott-Schottky and photoelectrochemical measurements were performed to reveal the performance-limiting factors of those absorbers for photoelectrochemical water oxidation. Our results provide new insights to improve the performance of ferrite-based photoelectrodes in the future.
引用
收藏
页码:18240 / 18247
页数:8
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