Current-Density Dependence on Ag eFUSEs With TiN Underlayers

被引:2
|
作者
Indluru, Anil [1 ]
Misra, Ekta [2 ]
Alford, Terry L. [1 ]
机构
[1] Arizona State Univ, Sch Mech Aerosp Chem & Mat Engn, Tempe, AZ 85281 USA
[2] Arizona State Univ, Sch Mat, Tempe, AZ 85281 USA
关键词
Electromigration; fuses; silver; ELECTROMIGRATION; FAILURE; ALUMINUM; STRESS; TIME;
D O I
10.1109/LED.2009.2031257
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silver-based metallization has been studied for a potential application as an electrically programmable fuse (eFUSE) device by local Joule heating induced at high current densities. Three different line widths (3.8, 6.3, and 10 mu m) are investigated by subjecting them to extremely high current-density conditions. Based on short median lifetime and the topography of the failure sites, the dominant failure mechanism in Ag eFUSEs with TiN barrier layer under these current densities is examined. Evaporation times have also been calculated to correlate the Ag properties with the median failure time. The barrier layer has an important role to play in determining the failure time in these types of eFUSEs.
引用
收藏
页码:1134 / 1136
页数:3
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