Annealing induced diffusion dynamics in as ion-implanted GaAs

We determine the annealing dynamics of AS(Ga) antisite defects in As ion-implanted GaAs. An Arrhenius plot of the carrier decay rate or the defect density vs. the annealing temperature in the high temperature regime gives an energy E-PA, which is different from true activation energy. The annealing time dependence of E-PA obtained by the two diffusion models (self diffusion of ASGa antisite defects and VG, vacancy assisted diffusion of AS(Ga) antisite defects) are compared with E-PA's obtained from already published works. The results prove that the diffusion of AS(Ga) antisite defects is assisted by the V-Ga vacancy defects that exist in a high density.