Mid-Infrared Photonics

被引：0

作者：

Soref, Richard ^{[1
]}

机构：

[1] Univ Massachusetts, Engn Program, 100 Morrissey Blvd, Boston, MA 02125 USA

来源：

2015 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Group IV and. I1I-V semiconductor photonic devices are prime candidates for photonic and opto-electronic (OEIC) applications in the 1.8 to 5.0 pm infrared wavelength range. Si-based active photonics in the GeSn/SiGeSn heterosystem (LDs, PDs, LEDs, amplifiers, EOMs) offers the Si CMOS "foundry advantage" for high-volume low-cost OEIC manufacture. Two MIR applications stand out: (1) deployment of GeSn SOI-based OEICs in a new "supplemental" global fiber-optic network at 2 um wavelengths; (2) creation/deployment of GeSn-related photonic chem-bio-physical sensor OEICs (as well as night-vision-imaging chips) in hand-held tablets and smart phones. The new smart sensors will be part of a local or global network-of-sensors utilizing the "internet of things."

引用

页数：3