Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coverages

被引：54

作者：

Qin, XR ^{[1
]}

Swartzentruber, BS

Lagally, MG

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.84.4645

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions.

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收藏

页码：4645 / 4648

页数：4

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