UHV-REM study of gold adsorption on the Si(111) surface

被引：14
|
作者：
Latyshev, AV [1 ]
Nasimov, DA [1 ]
Savenko, VN [1 ]
Aseev, AL [1 ]
机构：
[1] RAS, Inst Semicond Phys, SB, Novosibirsk, Russia
来源：
THIN SOLID FILMS | 2000年 / 367卷 / 1-2期
关键词：
gold adsorption on Si(III) surface; step bunching caused by electric current heating; surface migration of adsorbates;
D O I：
10.1016/S0040-6090(00)00668-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The initial stages of gold adsorption on the silicon (111) surface with different morphology have been investigated by ultra high vacuum reflection electron microscopy (UHV-REM). The main attention was paid to the sequent stages of three dimensional island nucleation of gold on the Si(lll) surface at various substrate temperatures. The influence of step bunches created under DC heating of the sample on surface distribution of the three dimensional gold islands has been revealed. Contribution of the heating electric current to the migration and shape modification processes of the three dimensional gold islands was investigated. A dominant migration of the gold islands in the step-up direction independently on the direction of the heating electric current was found. The obtained results evidence that the creation of chains of gold islands without application of any Lithography is possible by means of the self-organized processes on the silicon (111) surface during gold adsorption. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：142 / 148
页数：7
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