Annealing Effect in GaDyN on Optical and Magnetic Properties

被引：5

作者：

Zhou, Yi-Kai ^{[1
]}

Takahashi, Masahiro ^{[1
]}

Emura, Shuichi ^{[1
]}

Hasegawa, Shigehiko ^{[1
]}

Asahi, Hajime ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2010年 / 23卷 / 01期

关键词：

GaN-based diluted magnetic semiconductor; GaDyN; Ferromagnetism; Photoluminescence; Molecular beam epitaxy; Defects; MOLECULAR-BEAM EPITAXY; RF-MBE; FERROMAGNETISM;

D O I：

10.1007/s10948-009-0578-2

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The annealing effect on the optical and magnetic properties of the GaDyN layers was studied. The PL intensities of yellow and green bands as well as the intra-4f orbital transition of Dy(3+) ions were found to decrease for the samples annealed at 900 and 1000 A degrees C. It is supposed that the intra-4f orbital transition is related to the broad peak luminescence coming from defects. Increasing the annealing temperature, the magnetization becomes smaller. It is considerable that the number of electrons coming from defects was reduced by the annealing treatments and that the ferromagnetism in GaDyN is attributed as carrier induced ferromagnetism.

引用

页码：103 / 105

页数：3

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