Blue and green semiconductor lasers: a status report

被引：32
作者：
Nurmikko, A
Gunshor, RL
机构：
[1] BROWN UNIV, DEPT PHYS, PROVIDENCE, RI 02912 USA
[2] PURDUE UNIV, SCH ELECT ENGN, W LAFAYETTE, IN 47907 USA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 11期
关键词：
D O I：
10.1088/0268-1242/12/11/003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An overview is given of recent laboratory developments in wide-bandgap semiconductor diode lasers. We concentrate on the device science of these blue-green light emitters and outline some of the existing key technical challenges. Following a description of the current device status of the edge-emitting GaN- and ZnSe-based heterojunction lasers, we illustrate the special features of wide-gap semiconductor lasers by focusing on the physics of optical gain and possibilities in short-vertical-cavity structures.
引用
收藏
页码：1337 / 1347
页数：11
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