Structure and electrical properties of c-axis epitaxial Srm-3Bi4TimO3m+3 (m=5 and 6) thin films

被引:4
作者
Wang, Lei [1 ]
Ding, Lu-Yi [1 ]
Zhang, Shan-Tao [1 ]
Chen, Yan-Feng [1 ]
Liu, Zhi-Guo [1 ]
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
关键词
Aurivillius oxides; Epitaxial thin films; Ferroelectric polarization; PULSED-LASER DEPOSITION; BI4TI3O12; GROWTH;
D O I
10.1016/j.ssc.2009.08.018
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
C-axis epitaxial Sm-3Bi4TmO3M+3 (SBTim, m = 5 and 6) thin films were fabricated on conductive LaNiO3 (LNO) coated LaAlO3 (LAO) substrates by pulsed laser deposition. The structure was characterized by x-ray diffraction (including theta - 2 theta, rocking curve, and phi scans) and atomic force microscopy. The epitaxial relationship was established (001)SBTim//(001)LNO/1(001)LAO, [110] SBTim//[ 110]LNO//[110]LAO when orthorhombic structure indexing was used for SBTim. It is revealed that the films with odd m have a ferroelectric hysteresis loops whereas those with even m have collinear polarization-electric field curves. The microstructure background responsible for the observations was discussed. Our results provide further evidence that the c-axis polarization of Bi-layered oxides depends on the parity of in. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2061 / 2064
页数:4
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