Fabrication of a Graphene/ZnO based p-n junction device and its ultraviolet photoresponse properties

被引：27

作者：

Kwon, Young-Tae ^{[1
]}

Kang, Sung-Oong ^{[1
]}

Cheon, Ji-Ae ^{[1
]}

Song, Yoseb ^{[1
]}

Lee, Jong-Jin ^{[2
]}

Choa, Yong-Ho ^{[1
]}

机构：

[1] Hanyang Univ, Dept Fus Chem Engn, Ansan 426791, South Korea

[2] Gyeongsang Natl Univ, Dept Phys, Jinju 660701, South Korea

来源：

APPLIED SURFACE SCIENCE | 2017年 / 415卷

关键词：

p-Doped graphene; n-Type ZnO; Photoresponse Charge transfer; Work function; FILMS;

D O I：

10.1016/j.apsusc.2016.10.159

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Graphene with a zero-bandgap energy is easily doped using a chemical dopant, and a shift upwards or downwards in the Fermi level is generated. Moreover, the integration of inorganic material into the doped graphene changes the physical and chemical properties of the material. For this purpose, we successfully fabricated a p-n junction device by depositing an n-typed ZnO layer on p-doped graphene and studied the ultraviolet (UV) photoresponse properties under a photocurrent (UV light on) and a dark current (UV light off). Two devices, lateral and vertical, were developed by alternating the thickness of the ZnO layer, and the photoresponse mechanisms were described on the basis of the contact potential difference. (C) 2016 Elsevier B.V.All rights reserved.

引用

页码：2 / 7

页数：6

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