Pentacene devices and logic gates fabricated by organic vapor phase deposition

被引:35
|
作者
Rolin, Cedric
Steudel, Soeren
Myny, Kris
Cheyns, David
Verlaak, Stijn
Genoe, Jan
Heremans, Paul
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] Catholic Univ Louvain, PCPM, B-1348 Louvain, Belgium
[3] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium
关键词
D O I
10.1063/1.2388864
中图分类号
O59 [应用物理学];
学科分类号
摘要
An organic vapor phase deposition (OVPD) tool has been developed and optimized for the deposition of pentacene thin films. Pentacene is grown with a good thickness uniformity, a good material consumption efficiency, and deposition rates up to 9.5 A/s. Top-contact transistors based on OVPD-grown pentacene show high mobilities (up to 1.35 cm(2)/V s) and excellent characteristics, even at high deposition rates. Elementary circuit blocks have also been produced using an OVPD-deposited pentacene film. A five-stage ring oscillator features a stage delay of 2.7 mu s at a supply voltage of 22 V. (c) 2006 American Institute of Physics.
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页数:3
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