A Multiepi Superjunction MOSFET With a Lightly Doped MOS-Channel Diode for Improving Reverse Recovery

被引：15

作者：

Huang, Mingmin ^{[1
,2
]}

Li, Rui ^{[1
,2
]}

Yang, Zhimei ^{[1
,2
]}

Ma, Yao ^{[1
,2
]}

Li, Yun ^{[1
,2
]}

Zhang, Xi ^{[1
,2
]}

Gong, Min ^{[1
,2
]}

机构：

[1] Sichuan Univ, Coll Phys, Chengdu 610065, Peoples R China

[2] Sichuan Univ, Key Lab Microelect Sichuan Prov, Chengdu 610065, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 05期

基金：

中国国家自然科学基金;

关键词：

MultiepiMOS-channel diode (MCD); power MOSFET; reverse recovery; superjunction; POWER MOSFETS; CONVERTER;

D O I：

10.1109/TED.2021.3064792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multiepi (ME) superjunction (SJ) MOSFET with a lightly-doped MOS-channel diode (MCD) is studied by TCAD simulations. When the p-pillar is formed by the ME process, the resistance of the p-pillar can be much higher than that of a uniformly doped p-pillar, which helps to suppress reverse recovery oscillations of the body diode. Besides, by introducing the lightly doped MCD, electrons can easily flow from the n-pillar into the source contact when the body diode is in the ON-state. Thus, the hole injection efficiency of the body diode can be lowered to reduce reverse recovery charge (Q(rr)) and further suppress reverse recovery oscillations. Simulation results show that the proposed SJ MOSFET is able to obtain a 64% lower Qrr and much lower reverse recovery oscillations than the conventional SJ MOSFET with a uniformly doped p-pillar.

引用

页码：2401 / 2407

页数：7

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