Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon

被引：79

作者：

Durand, A. ^{[1
,2
]}

Baron, Y. ^{[1
,2
]}

Redjem, W. ^{[1
,2
]}

Herzig, T. ^{[3
]}

Benali, A. ^{[4
]}

Pezzagna, S. ^{[3
]}

Meijer, J. ^{[3
]}

Kuznetsov, A. Yu ^{[5
]}

Gerard, J-M ^{[6
,7
]}

Robert-Philip, I ^{[1
,2
]}

Abbarchi, M. ^{[4
]}

Jacques, V ^{[1
,2
]}

Cassabois, G. ^{[1
,2
]}

Dreau, A. ^{[1
,2
]}

机构：

[1] Univ Montpellier, Lab Charles Coulomb, F-34095 Montpellier, France

[2] CNRS, F-34095 Montpellier, France

[3] Univ Leipzig, Felix Bloch Inst Solid State Phys, Div Appl Quantwn Syst, Linneestr 5, D-04103 Leipzig, Germany

[4] Aix Marseille Univ, CNRS, Cent Marseille, IM2NP,UMR 7334, Campus St Jerome, F-13397 Marseille, France

[5] Univ Oslo, Dept Phys, NO-0316 Oslo, Norway

[6] Univ Grenoble Alpes, Dept Phys, IRIG PHELIQS, F-38000 Grenoble, France

[7] CEA Grenoble, F-38000 Grenoble, France

来源：

PHYSICAL REVIEW LETTERS | 2021年 / 126卷 / 08期

关键词：

QUANTUM; DEFECTS; SPINS; LUMINESCENCE; RESONANCE; CARBIDE; DOPANTS;

D O I：

10.1103/PhysRevLett.126.083602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the detection of individual emitters in silicon belonging to seven different families of optically active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the 1.1-1.55 mu m range, spanning the O and C telecom bands. We analyze their photoluminescence spectra, dipolar emissions, and optical relaxation dynamics at 10 K. For a specific family, we show a constant emission intensity at saturation from 10 K to temperatures well above the 77 K liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these individual artificial atoms are promising systems to investigate for Si-based quantum technologies.

引用

页数：6

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