Comparison of 1300 nm quantum well lasers using different material systems

被引：19

作者：

Lin, G ^{[1
]}

Lee, CP ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2002年 / 34卷 / 12期

关键词：

band offset ratio; band structure; material gain; 1300-nm band; quaternary material system;

D O I：

10.1023/A:1021386822847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The band structure and material gain are calculated for 1300-nm band quantum well lasers of GaInNAs, AlGaInAs and GaInAsP material systems. The material compositions for each system are carefully chosen for comparison. The calculated results show that the peak gain is around the same in spite of the difference in band structures for the three systems.

引用

页码：1191 / 1200

页数：10

共 7 条

[1]

CHUANG SL, 1995, PHYSICS OPTOELECTRON

[2] ELEMENTARY THEORY OF HETEROJUNCTIONS [J].