Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy

被引：254

作者：

Chen, YF ^{[1
]}

Bagnall, DM ^{[1
]}

Zhu, ZQ ^{[1
]}

Sekiuchi, T ^{[1
]}

Park, KT ^{[1
]}

Hiraga, K ^{[1
]}

Yao, T ^{[1
]}

Koyama, S ^{[1
]}

Shen, MY ^{[1
]}

Goto, T ^{[1
]}

机构：

[1] TOHOKU UNIV,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 181卷 / 1-2期

关键词：

growth; ZnO; plasma; MBE; sapphire; optoelectronic;

D O I：

10.1016/S0022-0248(97)00286-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO single crystal thin films were grown by plasma enhanced molecular beam epitaxy on (0 0 0 1) sapphire. The growth modes of ZnO epilayers were investigated by reflection high-energy electron diffraction. A transition from two-dimensional nucleation to three-dimensional nucleation is found at the initial growth stage. Optical properties of the films, studied by photoluminescence spectroscopy, exhibit a dominant bound exciton emission at 3.361 eV at 4 K, and a deep level emission centered at 2.42 eV which is associated with either impurities or native defects. The deep level emission which is successfully suppressed to 1/500 of intensity of the excitonic emission. Fabrication of these high-quality ZnO epilayers had lead to observation of stimulated emission at room temperature.

引用

页码：165 / 169

页数：5

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