Characteristics of Multi-Quantum-Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO2/Si Substrate

被引：3
作者：
Han, Xu [1 ]
Tsushima, Koki [1 ]
Shirai, Takuto [1 ]
Ishizaki, Takahiro [1 ]
Shimomura, Kazuhiko [1 ]
机构：
[1] Sophia Univ, Dept Engn & Appl Sci, Tokyo 1028554, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2021年 / 218卷 / 10期
关键词：
direct bonding; InP; SiO2; Si substrates; laser diodes; multi-quantum-well active layers;
D O I：
10.1002/pssa.202000767
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The lasing characteristics of separate-confinement-heterostructure multi-quantum-well (SCH-MQW) laser diodes (LDs) grown on InP templates bonded to a SiO2/Si substrate using the hydrophilic bonding method are investigated. The layers of the SCH seven-quantum-well-structured LD are grown by low-pressure metal-organic vapor-phase epitaxy. After the pulsed power supply of a high-mesa waveguide is tested with a surface electrode structure, the LD grown on an InP/SiO2/Si substrate is found to exhibit superior lasing characteristics compared to an LD grown on an InP/Si substrate, and the threshold current density is equivalent to that of a surface-electrode-structured LD grown on an InP substrate. The slope efficiency of the LD grown on the InP/SiO2/Si substrate is compared with that of an LD grown on an InP/Si substrate.
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页数：6
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