Preparation of ITO and IZO Thin Films by Using the Facing Targets Sputtering (FTS) Method

被引:25
作者
Kim, Sang-Mo [1 ]
Choi, Hyung-Wook [1 ]
Kim, Kyung-Hwan [1 ]
Park, Sang-Joon [2 ]
Yoon, Hyon-Hee [2 ]
机构
[1] Kyungwon Univ, Dept Elect Engn, Songnam 461701, South Korea
[2] Kyungwon Univ, Dept Chem Engn, Songnam 461701, South Korea
关键词
FTS; Indium tin oxide; Indium zinc oxide; Annealing; ZINC-OXIDE; ELECTRICAL PROPERTY; INDIUM-OXIDE;
D O I
10.3938/jkps.55.1996
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In study, for transparent conductive oxides (TCOS) we investigated the electrical and the optical properties of thin films of indium oxide (In2O3) doped with 10 wt.% tin oxide (SnO2) and of indium oxide (In2O3) doped with 10 wt.% zinc oxide thin films in facing targets sputtering (FTS) system. All thin films were prepared on the glass at room temperature and at various oxygen contents in the sputter gas. All as-deposited thin films were annealed at various temperatures in an air atmosphere. The electrical and the optical properties of the as-deposited thin films were investigated by using a four point probe, an UV/VIS spectrometer, an X-ray diffractometer (XRD), and a Hall Effect measurement. As a result, with increasing oxygen content in the sputter gas, the optical transmittance in the visible range of all thin films increased (>80 %). ITO and IZO thin films had resistivities of 6.7 x 10(-4) Omega.cm and 4.5 x 10(-4) Omega.cm respectively at the optimum oxygen contents. After post-annealing, the structure of ITO thin film was polycrystalline, but the IZO thin films had amorphous.
引用
收藏
页码:1996 / 2001
页数:6
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