Ferroelectric Second-Order Memristor

被引：100

作者：

Mikheev, Vitalii ^{[1
]}

Chouprik, Anastasia ^{[1
]}

Lebedinskii, Yury ^{[1
]}

Zarubin, Sergei ^{[1
]}

Matveyev, Yury ^{[2
]}

Kondratyuk, Ekaterina ^{[1
]}

Kozodaev, Maxim G. ^{[1
]}

Markeev, Andrey M. ^{[1
]}

Zenkevich, Andrei ^{[1
]}

Negrov, Dmitrii ^{[1
]}

机构：

[1] Moscow Inst Phys & Technol, 9 Inst Skiy Lane, Dolgoprudnyi 141700, Moscow Reg, Russia

[2] Deutsches Elektronen Synchrotron, 85 Notkestr, D-22607 Hamburg, Germany

来源：

ACS APPLIED MATERIALS & INTERFACES | 2019年 / 11卷 / 35期

基金：

俄罗斯科学基金会;

关键词：

ferroelectric hafnium oxide; ferroelectric tunnel junction; ferroelectric memristor; resistive switching; second-order memristor; synaptic plasticity; WAKE-UP; SYNAPSE; ELECTRORESISTANCE; POLARIZATION; DEVICES; MEMORY; FILMS;

D O I：

10.1021/acsami.9b08189

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

While the conductance of a first-order memristor is defined entirely by the external stimuli, in the second-order memristor it is governed by the both the external stimuli and its instant internal state. As a result, the dynamics of such devices allows to naturally emulate the temporal behavior of biological synapses, which encodes the spike timing information in synaptic weights. Here, we demonstrate a new type of second-order memristor functionality in the ferroelectric HfO2-based tunnel junction on silicon. The continuous change of conductance in the p(+)-Si/Hf0.5Zr0.5O2/TiN tunnel junction is achieved via the gradual switching of polarization in ferroelectric domains of polycrystalline Hf0.5Zr0.5O2 layer, whereas the combined dynamics of the built-in electric field and charge trapping/detrapping at the defect states at the bottom Si interface defines the temporal behavior of the memristor device, similar to synapses in biological systems. The implemented ferroelectric second-order memristor exhibits various synaptic functionalities, such as paired-pulse potentiation/depression and spike-rate-dependent plasticity, and can serve as a building block for the development of neuromorphic computing architectures.

引用

页码：32108 / 32114

页数：7

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