Room-temperature dislocation activity during mechanical deformation of polycrystalline ultra-high-temperature ceramics

被引：66

作者：

Ghosh, Dipankar ^{[1
]}

Subhash, Ghatu ^{[1
]}

Bourne, Gerald R. ^{[2
]}

机构：

[1] Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Major Analyt Instrumentat Ctr, Gainesville, FL 32611 USA

来源：

SCRIPTA MATERIALIA | 2009年 / 61卷 / 11期

关键词：

Ceramics; Mechanical deformation; Transmission electron microscopy; Dislocations; Bonding; ELECTRICAL-CONDUCTIVITY; PLASTIC-DEFORMATION; ZIRCONIUM; SILICON; DIBORIDES; HARDNESS; HAFNIUM;

D O I：

10.1016/j.scriptamat.2009.08.038

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ceramics such as ZrB2 and HfB2 are potential candidates for ultra-high-temperature applications. Their electrical conductivity values are comparable to those of metals. Such unusual electrical properties arise from the presence of metallic bonds in their crystal structure. We argue that the metallicity in chemical bonding is also reflected in their room-temperature mechanical deformation, which was investigated through indentation-induced slip bands and the resulting dislocation activity. These observations were rationalized on the basis of metallic character of their dislocation core structure. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：1075 / 1078

页数：4

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