Room-temperature dislocation activity during mechanical deformation of polycrystalline ultra-high-temperature ceramics

被引:65
作者
Ghosh, Dipankar [1 ]
Subhash, Ghatu [1 ]
Bourne, Gerald R. [2 ]
机构
[1] Univ Florida, Dept Mech & Aerosp Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Major Analyt Instrumentat Ctr, Gainesville, FL 32611 USA
关键词
Ceramics; Mechanical deformation; Transmission electron microscopy; Dislocations; Bonding; ELECTRICAL-CONDUCTIVITY; PLASTIC-DEFORMATION; ZIRCONIUM; SILICON; DIBORIDES; HARDNESS; HAFNIUM;
D O I
10.1016/j.scriptamat.2009.08.038
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ceramics such as ZrB2 and HfB2 are potential candidates for ultra-high-temperature applications. Their electrical conductivity values are comparable to those of metals. Such unusual electrical properties arise from the presence of metallic bonds in their crystal structure. We argue that the metallicity in chemical bonding is also reflected in their room-temperature mechanical deformation, which was investigated through indentation-induced slip bands and the resulting dislocation activity. These observations were rationalized on the basis of metallic character of their dislocation core structure. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:1075 / 1078
页数:4
相关论文
共 27 条
  • [21] Recent advances in dynamic indentation fracture, impact damage and fragmentation of ceramics
    Subhash, Ghatu
    Maiti, Spandan
    Geubelle, Philippe H.
    Ghosh, Dipankar
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2008, 91 (09) : 2777 - 2791
  • [22] THE FORMATION AND CRYSTAL STRUCTURE OF SILICON CARBIDE
    TAYLOR, A
    LAIDLER, DS
    [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1950, 1 (JUL): : 174 - 181
  • [23] Thevenot F., 1990, Journal of the European Ceramic Society, V6, P205, DOI 10.1016/0955-2219(90)90048-K
  • [24] Electronic structure, bonding, and ground-state properties of AlB2-type transition-metal diborides -: art. no. 045115
    Vajeeston, P
    Ravindran, P
    Ravi, C
    Asokamani, R
    [J]. PHYSICAL REVIEW B, 2001, 63 (04):
  • [25] ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE OXIDES, BORIDES, CARBIDES, AND NITRIDES
    WANG, CC
    AKBAR, SA
    CHEN, W
    PATTON, VD
    [J]. JOURNAL OF MATERIALS SCIENCE, 1995, 30 (07) : 1627 - 1641
  • [26] High temperature microhardness of ZrB2 single crystals
    Xuan, Y
    Chen, CH
    Otani, S
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 35 (20) : L98 - L100
  • [27] Electronic structure, elasticity and hardness of diborides of zirconium and hafnium: First principles calculations
    Zhang, Xinghong
    Luo, Xiaoguang
    Han, Jiecai
    Li, Jinping
    Han, Wenbo
    [J]. COMPUTATIONAL MATERIALS SCIENCE, 2008, 44 (02) : 411 - 421