Amorphous to microcrystalline transition in thickness-graded hot-wire CVD silicon films

被引：0
|
作者：
Wang, Q [1 ]
Perkins, J [1 ]
Moutinho, H [1 ]
To, B [1 ]
Branz, HM [1 ]
机构：
[1] Natl Renewable Energy Lab, Elect Mat & Device Div, Golden, CO 80401 USA
来源：
AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002 | 2002年 / 715卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study the amorphous to microcrystalline silicon phase transition in hot-wire chemical vapor deposition thin-film silicon by depositing a series of unique, thickness-graded, samples on a glass substrate at 200degreesC. By inserting or withdrawing a motor-driven shutter during growth, we make samples that vary from 200 to about 2000 A thick across each 5-cm along stripe. Each stripe is grown at a different dilution ratio of hydrogen to silane in the source gas. The phase composition at various locations was determined by Raman and ultraviolet-reflectivity measurements. Atomic force microscopy (AFM) images of topology reveal that the surface changes from a rather smooth a-Si phase to more granular microcrystalline-Si (rms roughness increases from 10 to 47 Angstrom).
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页码：141 / 146
页数：6
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