Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

被引:121
作者
Chitnis, A [1 ]
Sun, J
Mandavilli, V
Pachipulusu, R
Wu, S
Gaevski, M
Adivarahan, V
Zhang, JP
Khan, MA
Sarua, A
Kuball, M
机构
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
关键词
D O I
10.1063/1.1518155
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a detailed high-pump-current study of self-heating effects in ultraviolet light-emitting diodes (LEDs) grown on sapphire. For deep ultraviolet LEDs on sapphire, our results establish self-heating to be a primary cause of premature power saturation under dc pumping. Even the flip-chip packaged devices undergo a steady-state temperature rise to about 70degreesC at a dc pump current of only 50 mA (at 8 V) resulting in a significant decrease in LED output. Temperature rise values estimated from peak emission wavelength shifts and from micro-Raman mapping of the active devices were in good agreement. (C) 2002 American Institute of Physics.
引用
收藏
页码:3491 / 3493
页数:3
相关论文
共 14 条
[1]   Sub-milliwatt power III-N light emitting diodes at 285 nm [J].
Adivarahan, V ;
Zhang, JP ;
Chitnis, A ;
Shuai, W ;
Sun, J ;
Pachipulusu, R ;
Shatalov, M ;
Khan, MA .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (4B) :L435-L436
[2]   Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells [J].
Adivarahan, V ;
Chitnis, A ;
Zhang, JP ;
Shatalov, M ;
Yang, JW ;
Simin, G ;
Khan, MA ;
Gaska, R ;
Shur, MS .
APPLIED PHYSICS LETTERS, 2001, 79 (25) :4240-4242
[3]   324 nm light emitting diodes with milliwatt powers [J].
Chitnis, A ;
Zhang, JP ;
Adivarahan, V ;
Shuai, W ;
Sun, J ;
Shatalov, M ;
Yang, JW ;
Simin, G ;
Khan, MA .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4B) :L450-L451
[4]  
Iwaya M, 2001, PHYS STATUS SOLIDI A, V188, P117, DOI 10.1002/1521-396X(200111)188:1<117::AID-PSSA117>3.0.CO
[5]  
2-X
[6]   Stripe geometry ultraviolet light emitting diodes at 305 nanometers using quaternary AlInGaN multiple quantum wells [J].
Khan, MA ;
Adivarahan, V ;
Zhang, JP ;
Chen, CQ ;
Kuokstis, E ;
Chitnis, A ;
Shatalov, M ;
Yang, JW ;
Simin, G .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (12A) :L1308-L1310
[7]   Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers [J].
Kinoshita, A ;
Hirayama, H ;
Ainoya, M ;
Aoyagi, Y ;
Hirata, A .
APPLIED PHYSICS LETTERS, 2000, 77 (02) :175-177
[8]   Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy [J].
Kuball, M ;
Hayes, JM ;
Uren, MJ ;
Martin, T ;
Birbeck, JCH ;
Balmer, RS ;
Hughes, BT .
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (01) :7-9
[9]   Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region [J].
Nishida, T ;
Saito, H ;
Kobayashi, N .
APPLIED PHYSICS LETTERS, 2001, 78 (25) :3927-3928
[10]   Room temperature 339 nm emission from Al0.13Ga0.87N/Al0.10Ga0.90N double heterostructure light-emitting diode on sapphire substrate [J].
Otsuka, N ;
Tsujimura, A ;
Hasegawa, Y ;
Sugahara, G ;
Kume, M ;
Ban, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (5B) :L445-L448