Phonon-enhanced intraband transitions in InAs self-assembled quantum dots

被引：12
|
作者：
Baranov, AV
Davydov, V
Ren, HW
Sugou, S
Masumoto, Y
机构：
[1] JST, ERATO, Single Quantum Dot Project, Tsukuba, Ibaraki 3002635, Japan
[2] NEC Corp Ltd, Optoelect Res Lab, Tsukuba, Ibaraki 3058501, Japan
[3] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan
来源：
JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷
关键词：
InAs; quantum dots; phonon; carrier relaxation;
D O I：
10.1016/S0022-2313(99)00225-2
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Phonon-mediated intraband carrier relaxation was studied in InAs/GaAs self-assembled quantum dots (QDs) by combining resonant photoluminescence and photoluminescence excitation experiments with high spectral resolution. The phonon-related resonances were found to dominate both the luminescence and excitation spectra. Spectral widths of 1LO-phonon peaks are surprisingly small and comparable with the inverse lifetime of the LO phonons in QDs, whereas, the multiphonon resonances are much broader most likely reflecting the width of n-phonon density of states. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：503 / 505
页数：3
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