Nitridation of silicon-dioxide films grown on 6H silicon carbide

被引：63
|
作者：
Dimitrijev, S
Li, HF
Harrison, HB
Sweatman, D
机构：
[1] Sch. of Microelectronic Engineering, Griffith University, Brisbane
来源：
IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 05期
基金：
澳大利亚研究理事会;
关键词：
D O I：
10.1109/55.568752
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter addresses the question of why it is possible to grow high-quality oxide films on N-type but not on P-type SiC. It provides results which indicate that the oxide/SiC interface would be inferior to the oxide/Si interface for both, N-type and P-type SiC, if it were not for the beneficial effects of nitrogen incorporation, The letter presents, for the first time, results on nitridation of thermally grown oxides in NO and N2O, The results demonstrate that the oxides grown on P-type can be improved by NO annealing, but not by N2O annealing.
引用
收藏
页码：175 / 177
页数：3
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