High saturation power 1.3-mu m MQW electroabsorption waveguide modulators on GaAs substrates

被引：0

作者：

Koi, KK

Shen, L

Wieder, HH

Chang, WSC

机构：

[1] Dept. of Elec. and Comp. Engineering, University of California, San Diego, San Diego

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1997年 / 7卷 / 10期

关键词：

electroabsorption modulators; microwave photonic links; semiconductor quantum wells;

D O I：

10.1109/75.631188

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analog InGaAs/InAlAs multiple-quantum-well electroabsorption waveguide modulator operating at 1.32-mu m wavelength has been designed, fabricated, and characterized for the first time on a GaAs substrate, A typical 3-mu m-wide 115-mu m-long device exhibits a high optical saturation power in excess of 17 mW and a 3-dB electrical bandwidth of 20 GHz. An equivalent half-cave voltage V-pi of 2.8 V has also been achieved.

引用

页码：320 / 322

页数：3

共 7 条

[1] High-performance and low-consumption 10Gb/s GaAs PHEMT driver for external modulation transmitter [J].