Junction parameter control of Bi2Sr2CaCu2O8+δ stacked junctions by annealing

被引：37

作者：

Inomata, K ^{[1
]}

Kawae, T

Nakajima, K

Kim, SJ

Yamashita, T

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 05期

关键词：

D O I：

10.1063/1.1542679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The control of the critical current density (J(c)) and the junction resistance (R-N) along the c axis of intrinsic Josephson junctions (IJJs) on a high-T-c superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of J(c), R-N, and the carrier density in Bi2Sr2CaCu2O8+delta (Bi-2212) whiskers by changing the carrier density with an annealing process. As a result, the J(c) decreased, and the R-N increased systematically when the carrier density decreased. The values of J(c) and R-N could be controlled by a change in the carrier density. (C) 2003 American Institute of Physics.

引用

页码：769 / 771

页数：3

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