Electrochemical thickening with gold of thin metallic layers

被引：0

作者：

Macherzynski, Wojciech ^{[1
]}

Buba, Piotr ^{[1
]}

Pokryszka, Piotr ^{[1
]}

Ilgiewicz, Grzegorz ^{[1
]}

Paszkiewicz, Regina ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Wydzial Elekt Mikrosyst & Fotoniki, Ul Wyb Wyspianskiego 27, PL-50370 Wroclaw, Poland

来源：

PRZEGLAD ELEKTROTECHNICZNY | 2019年 / 95卷 / 10期

关键词：

electrochemical thickening; semiconductor devices; ohmic contacts; Schottky contacts;

D O I：

10.15199/48.2019.10.33

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The article present the project of power supply unit of the system for electrochemical thickening of thin metallic layers with gold. Thickening of thin metallic layers in semiconductor technology is an important stage of the process of devices fabrication. It allows to obtain the proper wire connections in the process of thermo- and/or ultra-compression and additional advantage of thickened metallization layers is the reduction of surface resistance, that is important for ensuring proper operation of devices fabricated in AIIIN.

引用

页码：146 / 149

页数：4

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