Controlling the profile of high aspect ratio gratings in diamond

被引：25
|
作者：
Catalan, Ernesto Vargas [1 ]
Forsberg, Pontus [1 ]
Absil, Olivier [2 ]
Karlsson, Mikael [1 ]
机构：
[1] Uppsala Univ, Dept Engn Sci, Angstrom Lab, Box 534, S-75121 Uppsala, Sweden
[2] Univ Liege, Dept Astrophys Geophys & Oceanog, 17 Allee Six Aout,Bat B5c, B-4000 Liege, Belgium
来源：
DIAMOND AND RELATED MATERIALS | 2016年 / 63卷
基金：
欧洲研究理事会; 澳大利亚研究理事会;
关键词：
Grating; Reactive ion etching; Synthetic diamond; Sputtering; ETCHING PROCESS; FABRICATION; MICROOPTICS; SURFACES; ICP;
D O I：
10.1016/j.diamond.2015.08.007
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Diamond is an excellent material for infrared optics and for applications in harsh environments. Some of those desirable properties, i.e. hardness and chemical inertness, also make it a challenging material to machine and etch. In this study we have tested a wide range of etch parameters in an inductively coupled plasma etcher, in order to produce highly controlled, high aspect ratio gratings in diamond. We discuss the effects of pressure, bias power, and some gas mixture variation (pure oxygen and argon-oxygen) on the etch results and how it impacts the etch mask sputtering and redeposition. We also present a method for applying a fresh aluminum mask, in order to etch even deeper optical grating. Gratings with aspect ratios as high as 1:13.5 have been achieved with a 1.42 mu m grating period. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：60 / 68
页数：9
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