A Facile Self-assembly Synthesis of Hexagonal ZnO Nanosheet Films and Their Photoelectrochemical Properties

被引：33

作者：

Zhang, Bin ^{[1
]}

Wang, Faze ^{[1
]}

Zhu, Changqing ^{[1
]}

Li, Qiang ^{[1
]}

Song, Jingnan ^{[1
]}

Zheng, Maojun ^{[1
,2
]}

Ma, Li ^{[3
]}

Shen, Wenzhong ^{[1
,2
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ, Shanghai 200240, Peoples R China

[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[3] Shanghai Jiao Tong Univ, Sch Chem & Chem Technol, Shanghai 200240, Peoples R China

来源：

NANO-MICRO LETTERS | 2016年 / 8卷 / 02期

关键词：

Zinc oxide; Nanosheet film; Self-assemble; Galvanic displacement method; Photoelectrochemical property; THIN-FILMS; LOW-TEMPERATURE; NANOSTRUCTURES; GROWTH; PERFORMANCE; DEPOSITION; NANOWIRES; NANORODS; LIGHT;

D O I：

10.1007/s40820-015-0068-y

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Here, large-scale and uniform hexagonal zinc oxide (ZnO) nanosheet films were deposited onto indium tin oxide (ITO)-coated transparent conducting glass substrates via a facile galvanic displacement deposition process. Compared with other commonly used solution methods, this process avoids high temperature and electric power as well as supporting agents to make it simple and cost-effective. The as-fabricated ZnO nanosheet films have uniform hexagonal wurtzite structure. The photoelectrochemical (PEC) cell based on ZnO nanosheet film/ITO photoelectrode was also fabricated and its performance was improved by optimizing the solution concentration. A higher photocurrent density of similar to 500 mu A cm(-2) under AM 1.5 G simulated illumination of 100 mW cm(-2) with zero bias potential (vs. Ag/AgCl electrode) was obtained, which may ascribe to the increased surface-to-volume ratio of disordered ZnO nanosheet arrays. Our developed method may be used to deposit other oxide semiconductors, and the ZnO nanosheet film/ITO PEC cell can be used to design low-cost optoelectronic and photoelectrochemical devices.

引用

页码：137 / 142

页数：6

共 38 条

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