Diffusion study of implanted iodine in zirconium using ion beams

被引:4
|
作者
Moncoffre, N [1 ]
Carlot, G [1 ]
Chevarier, A [1 ]
机构
[1] Univ Lyon 1, Inst Phys Nucl Lyon, IN2P3, CNRS, F-69622 Villeurbanne, France
来源
SURFACE & COATINGS TECHNOLOGY | 2000年 / 128卷
关键词
iodine; zirconium; diffusion; nuclear wastes; nuclear reactor; ion implantation; Rutherford backscattering spectrometry;
D O I
10.1016/S0257-8972(00)00636-8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This study is related to the back end of the nuclear fuel cycle. During nuclear reactor operation, the inner side of the zircaloy cladding tube is implanted by recoil with fission products. Among them,I-129 poses a real problem firstly, because it is a volatile element and secondly because it has a very long half-life (T = 1.59 x 10(7) years). The aim of this paper is to make an analysis of iodine diffusion into zirconium compared to zirconium oxide. In order to analyse the mechanisms involved in iodine migration, stable (I-127) and radioactive iodine (I-131) species were implanted into zirconium. Diffusion profiles of iodine were followed as a function of successive annealing times (up to several hours) and temperatures (in the range 400-600 degrees C), either by using Rutherford backscattering spectrometry to profile I-127 Or by gamma spectroscopy to measure I-131 release. These two techniques allowed us to determine very low iodine diffusion coefficient values (down to 10(-17) cm(2) s(-1)) and to extrapolate them to waste storage conditions. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:9 / 14
页数:6
相关论文
共 50 条
  • [31] UTILIZATION OF ION ANALYSER FOR STUDY OF OXYGEN DIFFUSION IN SOLIDS AND ITS APPLICATION TO ZIRCONIUM
    QUATAERT, D
    COENPORI.F
    JOURNAL OF NUCLEAR MATERIALS, 1970, 36 (01) : 20 - &
  • [32] Iodine Atom Diffusion in SiC and Zirconium with First-Principles Calculations
    Han, Ruixuan
    Liu, Liucheng
    Tu, Rui
    Xiao, Wei
    Li, Yingying
    Li, Huailin
    Shao, Dan
    NUCLEAR TECHNOLOGY, 2016, 195 (02) : 192 - 203
  • [33] ENHANCED DIFFUSION AND OUT-DIFFUSION IN ION-IMPLANTED SILICON
    MEYER, O
    MAYER, JW
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4166 - &
  • [34] Study of the ion-acoustic effect using focused ion beams
    Teichert, J
    Bischoff, L
    Kohler, B
    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 555 - 560
  • [35] The air oxidation behavior of lanthanum ion implanted zirconium at 500 °C
    Peng, DQ
    Bai, XD
    Chen, XW
    Zhou, QG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 201 (04): : 589 - 594
  • [36] Effect of fluorine on the diffusion of boron in ion implanted Si
    Downey, DF
    Chow, JW
    Ishida, E
    Jones, KS
    APPLIED PHYSICS LETTERS, 1998, 73 (09) : 1263 - 1265
  • [37] DIFFUSION OF AL IN ION-IMPLANTED PD AND PT
    LAPPALAINEN, R
    ANTTILA, A
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (03): : 131 - 134
  • [38] THE DIFFUSION OF ION-IMPLANTED BORON IN SILICON DIOXIDE
    NG, J
    GIBBONS, JF
    SIGMON, T
    AIP CONFERENCE PROCEEDINGS, 1984, (122) : 20 - 33
  • [39] DIFFUSION OF NITROGEN IN ION-IMPLANTED CHROMIUM AND TUNGSTEN
    KEINONEN, J
    RAISANEN, J
    ANTTILA, A
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (04): : 227 - 232
  • [40] Characterization of ion-implanted gallium diffusion in silicon
    Sato, Y., 1600, Japan Society of Applied Physics (43):